MACROSTRUCTURAL INTEGRITY OF VAPOR-DEPOSITED BORON AND SILICON CARBIDE FILAMENT

被引：10

作者：

ADLER, RPI

HAMMOND, ML

机构：

[1] Brunswick Corporation, Needham Research Laboratories, Needham

[2] Union Carbide Corporation, Electronics Division, San Diego

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 11期

关键词：

D O I：

10.1063/1.1652684

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Difference in the macrostructure of vapor-deposited B and SiC filaments have been related to the extent of reaction between the deposited material and its tungsten substrate. Chemical reactions between W and B during deposition create mechanical dilatations of sufficient magnitude to produce radial cracks in the B sheath running the length of the filament. Similar reactions between W and SiC do occur but such cracks do not form because both the amount of the reactant is less and the corresponding volume expansion is significantly smaller. © 1969 The American Institute of Physics.

引用

页码：354 / &

共 8 条

[1] METALLOGRAPHIC STRUCTURE OF CONTINUOUS VAPOR DEPOSITED SIC FILAMENTS [J].