CONTROLLING INTERFACIAL OXIDE LAYER OF TI-AL CONTACTS WITH CRO3-H3PO4 ETCH

被引:7
作者
SHANKOFF, TA
CHANG, CC
HASZKO, SE
机构
关键词
D O I
10.1149/1.2131474
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:467 / 471
页数:5
相关论文
共 10 条
[1]   OXIDE THICKNESS MEASUREMENTS UP TO 120 A ON SILICON AND ALUMINUM USING CHEMICALLY SHIFTED AUGER-SPECTRA [J].
CHANG, CC ;
BOULIN, DM .
SURFACE SCIENCE, 1977, 69 (02) :385-402
[2]  
CHANG CC, UNPUBLISHED
[3]  
CHANG CC, 1974, CHARACTERIZATION SOL, pCH20
[4]  
COSTELLO WR, UNPUBLISHED
[5]  
EDWARDS JD, 1940, P AM SOC TEST MATER, V40, P959
[6]  
LEWIS JE, 1956, INT J APPL RADIAT IS, V1, P33
[7]  
MCQUILLAN AD, 1956, TITANIUM, P250
[9]  
RETAJCZYK TF, UNPUBLISHED
[10]   EFFECT OF SURFACE-ROUGHNESS ON ELLIPSOMETRY OF ALUMINUM [J].
SMITH, T .
SURFACE SCIENCE, 1976, 56 (01) :252-271