SEMICONDUCTOR-TO-METAL TRANSITION IN GAP UNDER HIGH-PRESSURE

被引：43

作者：

ONODERA, A

KAWAI, N

ISHIZAKI, K

SPAIN, IL

机构：

[1] OSAKA UNIV,FAC ENGN SCI,DEPT MAT PHYS,TOYONAKA 560,OSAKA,JAPAN

[2] UNIV MARYLAND,DEPT CHEM ENGN,LAB HIGH PRESSURE SCI,COLLEGE PK,MD 20742

来源：

SOLID STATE COMMUNICATIONS | 1974年 / 14卷 / 09期

关键词：

D O I：

10.1016/0038-1098(74)90139-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：803 / 806

页数：4

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