POTENTIAL DISTRIBUTION AND CAPACITANCE OF ABRUPT HETEROJUNCTIONS

被引：45

作者：

CSERVENY, SI

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1968年 / 25卷 / 01期

关键词：

D O I：

10.1080/00207216808938067

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：65 / &

共 11 条

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[9] THE SURFACE-BARRIER TRANSISTOR .5. THE PROPERTIES OF METAL TO SEMICONDUCTOR CONTACTS [J].

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[10] CURRENT-VOLTAGE CHARACTERISTICS AND CAPACITANCE OF ISOTYPE HETEROJUNCTIONS [J].

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