IMPURITY INDUCED LAYER DISORDERING OF SI IMPLANTED ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURES - LAYER DISORDERING VIA DIFFUSION FROM EXTRINSIC DISLOCATION LOOPS

被引：17

作者：

GUIDO, LJ

HSIEH, KC

HOLONYAK, N

KALISKI, RW

EU, V

FENG, M

BURNHAM, RD

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] FORD MICROELECTR INC,COLORADO SPRINGS,CO 80908

[3] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 04期

关键词：

D O I：

10.1063/1.338111

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1329 / 1334

页数：6

共 22 条

[1]

CAMRAS MD, 1983, INST PHYS CONF SER, P233

[2] WAVELENGTH MODIFICATION OF ALXGA1-XAS QUANTUM WELL HETEROSTRUCTURE LASERS BY LAYER INTERDIFFUSION [J].

CAMRAS, MD ;

HOLONYAK, N ;

BURNHAM, RD ;

STREIFER, W ;

SCIFRES, DR ;

PAOLI, TL ;

LINDSTROM, C .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :5637-5641

[3] SI-DEFECT CONCENTRATIONS IN HEAVILY SI-DOPED GAAS - ANNEALING-INDUCED CHANGES-II [J].

CHEN, RT ;

SPITZER, WG .

JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (06) :1085-1129

[4] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J].

COLEMAN, JJ ;

DAPKUS, PD ;

KIRKPATRICK, CG ;

CAMRAS, MD ;

HOLONYAK, N .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :904-906

[5] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS [J].

DEPPE, DG ;

HSIEH, KC ;

HOLONYAK, N ;

BURNHAM, RD ;

THORNTON, RL .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4515-4520

[6]

FUKUMAGA T, 1985, INT S GAAS RELATED C, P439

[7] IMPLANTATION DISORDERING OF ALXGA1-XAS SUPERLATTICES [J].

GAVRILOVIC, P ;

DEPPE, DG ;

MEEHAN, K ;

HOLONYAK, N ;

COLEMAN, JJ ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :130-132

[8] SI-IMPLANTED AND DISORDERED STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM WELL LASERS [J].

GAVRILOVIC, P ;

MEEHAN, K ;

GUIDO, LJ ;

HOLONYAK, N ;

EU, V ;

FENG, M ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1985, 47 (09) :903-905

[9]

GIBBONS JF, 1975, PROJECTED RANGE STAT

[10] ION-SPECIES DEPENDENCE OF INTERDIFFUSION IN ION-IMPLANTED GAAS-ALAS SUPERLATTICES [J].

HIRAYAMA, Y ;

SUZUKI, Y ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (11) :1498-1502

← 1 2 3 →