GROWTH OF ALXGA1-XAS BY MOVPE USING A NEW ALKYLALUMINUM PRECURSOR

被引:7
作者
JONES, AC
JACOBS, PR
RUSHWORTH, S
ROBERTS, JS
BUTTON, C
WRIGHT, PJ
OLIVER, PE
COCKAYNE, B
机构
[1] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND
[2] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND
关键词
D O I
10.1016/0022-0248(89)90634-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:769 / 773
页数:5
相关论文
共 12 条
[1]   THE GROWTH AND CHARACTERIZATION OF AIGAAS USING DIMETHYL ALUMINUM-HYDRIDE [J].
BHAT, R ;
KOZA, MA ;
CHANG, CC ;
SCHWARZ, SA ;
HARRIS, TD .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :7-10
[2]  
BRADLEY DC, 1988, CHEMOTRONICS, V3, P159
[3]  
EISCH JJ, 1987, COMPREHENSIVE ORGANO, V1, P589
[4]   PYROLYSIS OF TRIMETHYLINDIUM [J].
JACKO, MG ;
PRICE, SJW .
CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1964, 42 (05) :1198-&
[5]   ANALYSIS OF HIGH-PURITY METALORGANICS BY ICP EMISSION-SPECTROMETRY [J].
JONES, AC ;
JACOBS, PR ;
CAFFERTY, R ;
SCOTT, MD ;
MOORE, AH ;
WRIGHT, PJ .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :47-54
[6]  
JONES AC, 1988, CHEMTRONICS, V3, P152
[7]   REDUCED CARBON CONTAMINATION IN OMVPE GROWN GAAS AND ALGAAS [J].
KOBAYASHI, N ;
MAKIMOTO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (10) :L824-L826
[8]   PROPERTIES OF HIGH-PURITY ALXGA1-XAS GROWN BY THE METAL-ORGANIC VAPOR-PHASE-EPITAXY TECHNIQUE USING METHYL PRECURSORS [J].
KUECH, TF ;
WOLFORD, DJ ;
VEUHOFF, E ;
DELINE, V ;
MOONEY, PM ;
POTEMSKI, R ;
BRADLEY, J .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :632-643
[9]   THE INFLUENCE OF GROWTH CHEMISTRY ON THE MOVPE GROWTH OF GAAS AND ALXGA1-XAS LAYERS AND HETEROSTRUCTURES [J].
KUECH, TF ;
VEUHOFF, E ;
KUAN, TS ;
DELINE, V ;
POTEMSKI, R .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :257-271
[10]   FACTORS INFLUENCING DOPING CONTROL AND ABRUPT METALLURGICAL TRANSITIONS DURING ATMOSPHERIC-PRESSURE MOVPE GROWTH OF ALGAAS AND GAAS [J].
ROBERTS, JS ;
MASON, NJ ;
ROBINSON, M .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :422-430