CHARACTERIZATION OF THIN SI1ON SURFACE-LAYERS ON SI BY PROTON AND ALPHA-PARTICLE BACKSCATTERING

被引：5

作者：

HAVRANEK, V ^{[1
]}

HNATOWICZ, V ^{[1
]}

KVITEK, J ^{[1
]}

OBRUSNIK, I ^{[1
]}

RYBKA, V ^{[1
]}

SVORCIK, V ^{[1
]}

机构：

[1] INST CHEM TECHNOL, DEPT CHEM TECHNOL ELECTR MAT, CS-16628 PRAGUE, CZECHOSLOVAKIA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 68卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(92)96080-I

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The stoichiometry and the oxygen areal density of Si1On (n = 0.1-2.0) polycrystalline films prepared on Si backing by deposition from the gaseous phase were determined using proton and He-4 ion backscattering. Different methods of film stoichiometry and oxygen areal density determination are compared and the respective oxygen detection limits are discussed.

引用

页码：223 / 226

页数：4

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