INVESTIGATION OF DOPING PROFILES AND INCORPORATION OF SN AND TE IN GAAS AND INXGA1-XAS FILMS GROWN FROM THIN SOLUTION LAYER

被引：5

作者：

BOLKHOVITYANOV, YB ^{[1
]}

BOLKHOVITYANOVA, RI ^{[1
]}

ZEMBATOV, NB ^{[1
]}

MARCHENKO, NE ^{[1
]}

机构：

[1] ACAD SCI USSR, SEMICOND PHYS INST, NOVOSIBIRSK, USSR

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 22卷 / 01期

关键词：

D O I：

10.1002/pssa.2210220141

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：349 / 355

页数：7

共 14 条

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[2]

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[3]

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[4]

BOLKHOVITIANOV YB, 1972, ELEKTRONNAYA TEKH 6, P49

[5]

BOLKHOVITIANOV YB, 1972, IAN SSSR NEORG MATER, V9, P895

[6]

GOODWIN AR, 1968, S GAAS DALLAS, P36

[7]

GROBE E, 1972, Z ANGEW PHYSIK, V32, P381

[8]

KANG CS, 1968, S GAAS DALLAS, P18

[9]

KINOSHITA S, 1968, S GAAS DALLAS, P22

[10]

PANISH MB, 1970, Patent No. 3533856