Studies of SiGe alloy surfaces after reactive ion etching

被引：3

作者：

Richter, HH ^{[1
]}

Wolff, A ^{[1
]}

Tillack, B ^{[1
]}

Kruger, D ^{[1
]}

Hoppner, K ^{[1
]}

Eggs, C ^{[1
]}

机构：

[1] UNIV GREIFSWALD,FACHBEREICH PHYS,D-17489 GREIFSWALD,GERMANY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1995年 / 152卷 / 02期

关键词：

Atomic force microscopy - Auger electron spectroscopy - Dry etching - Epitaxial growth - Morphology - Multilayers - Plasmas - Reactive ion etching - Stoichiometry - Surfaces - Thin films;

D O I：

10.1002/pssa.2211520212

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Reactive ion etching a characteristics of epitaxial Si1-xGex layers in SiCl4/Cl-2/N-2 plasma are investigated by different diagnostic techniques, such as Auger electron spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. Surface morphology and stoichiometry are influenced by the dry etching process. A slight Ge enrichment at the etched SiGe films is explained by the different volatility of the corresponding chlorides. Moreover, a procedure which allows an exactly determined etch stop in a thin buried SiGe alloy - as a necessary requirement for the following surface analysis - is introduced.

引用

页码：443 / 450

页数：8

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