CONTROL OF HYDROGENATION AND MODULATION OF THE STRUCTURAL NETWORK IN SI-H BY INTERRUPTED GROWTH AND H-PLASMA TREATMENT

被引：59

作者：

DAS, D

机构：

[1] Energy Research Unit, Indian Association for the Cultivation of Science, Jadavpur

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 16期

关键词：

D O I：

10.1103/PhysRevB.51.10729

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Control of hydrogenation and modulation of the structural network in Si:H is proposed by growth interruption and H-plasma exposure on stacking layers. Hydrogen incorporation as well as elimination are both possible through subsurface reactions by atomic hydrogen of the plasma. An increase in the optical gap due to rehydrogenation is obvious; however, widening in the optical gap during dehydrogenation of the network appears to be a unique feature which may suggest nanocrystallization and quantum size effects in the hydrogenated binary alloy. At the onset of nanocrystallization, a significant improvement in light-induced degradation has been observed. A wide range of temperatures to fabricate good quality equilibrated films could be provided by interrupted growth and H-plasma exposure technique. © 1995 The American Physical Society.

引用

页码：10729 / 10736

页数：8

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