METALLIC P-TYPE GAAS AND GAALAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：146

作者：

KONAGAI, M

YAMADA, T

AKATSUKA, T

SAITO, K

TOKUMITSU, E

TAKAHASHI, K

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 98卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(89)90196-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：167 / 173

页数：7

共 20 条

[11] A COMPARATIVE-STUDY OF GA(CH3)3 AND GA(C2H5)3 IN THE MOMBE OF GAAS [J].

PUTZ, N ;

HEINECKE, H ;

HEYEN, M ;

BALK, P ;

WEYERS, M ;

LUTH, H .

JOURNAL OF CRYSTAL GROWTH, 1986, 74 (02) :292-300

[12]

RABINZOHN P, 1988, 20TH 1988 INT C SOL

[13] CHARACTERIZATION OF P-TYPE GAAS HEAVILY DOPED WITH CARBON GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

SAITO, K ;

TOKUMITSU, E ;

AKATSUKA, T ;

MIYAUCHI, M ;

YAMADA, T ;

KONAGAI, M ;

TAKAHASHI, K .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) :3975-3979

[14]

SAITO K, 1989, I PHYS C SER, V96, P69

[15] KINETIC SIMULATION OF GAS-PHASE REACTIONS IN MOVPE GROWTH [J].

TANAKA, H ;

KOMENO, J .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :115-119

[16] METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF GAAS USING TRIMETHYL-GALLIUM AND TRIETHYL-GALLIUM SOURCES [J].

TOKUMITSU, E ;

KUDOU, Y ;

KONAGAI, M ;

TAKAHASHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (09) :1189-1192

[17] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIMETHYLGALLIUM AS A GA SOURCE [J].

TOKUMITSU, E ;

KUDOU, Y ;

KONAGAI, M ;

TAKAHASHI, K .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3163-3165

[18] ON THE REACTION-MECHANISM OF THE PYROLYSES OF TMG AND TEG IN MOCVD GROWTH REACTORS [J].

TSUDA, M ;

OIKAWA, S ;

MORISHITA, M ;

MASHITA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05) :L564-L566

[19] INTENTIONAL P-TYPE DOPING BY CARBON IN METALORGANIC MBE OF GAAS [J].

WEYERS, M ;

PUTZ, N ;

HEINECKE, H ;

HEYEN, M ;

LUTH, H ;

BALK, P .

JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (02) :57-59

[20] HEAVILY CARBON DOPED PARA-TYPE GAAS AND GAALAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

YAMADA, T ;

TOKUMITSU, E ;

SAITO, K ;

AKATSUKA, T ;

MIYAUCHI, M ;

KONAGAI, M ;

TAKAHASHI, K .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :145-149

← 1 2 →