IN-BEAM IMPLANTATION OF IRON INTO GERMANIUM, SILICON AND DIAMOND STUDIED BY THE MOSSBAUER-EFFECT

被引:16
作者
LATSHAW, GL [1 ]
RUSSELL, PB [1 ]
HANNA, SS [1 ]
机构
[1] STANFORD UNIV,DEPT PHYS,STANFORD,CA 94305
来源
HYPERFINE INTERACTIONS | 1980年 / 8卷 / 02期
关键词
D O I
10.1007/BF01026862
中图分类号
O64 [物理化学(理论化学)、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号
070203 ; 070304 ; 081704 ; 1406 ;
摘要
引用
收藏
页码:105 / 127
页数:23
相关论文
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