HIGH-PERFORMANCE GAAS GAINP HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION

被引：29

作者：

RAZEGHI, M

OMNES, F

DEFOUR, M

MAUREL, P

HU, J

WOLK, E

PAVLIDIS, D

机构：

[1] Laboratoire Central de Recherches, Thomson CSF, 91404 Orsay Cedex, Domaine de Corbeville

[2] Department of Electrical Engineering and Computer Science, University of Michigan

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1990年 / 5卷 / 03期

关键词：

D O I：

10.1088/0268-1242/5/3/017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the fabrication of high-quality GaAs/GaInP n-p-n heterojunction bipolar transistors grown by low-pressure metal-organic chemical vapour deposition on semi-insulating substrates. Various structures with homogeneous and graded bases have been fabricated. Doping profiles together with X-ray double diffraction patterns demonstrate the excellent control of growth parameters such as thicknesses, doping levels and interface quality. The static characteristics of the devices show current gains as high as 400, which is the highest value reported in that system.

引用

页码：278 / 280

页数：3

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