THE PROCESSES OF FORMATION AND EPITAXIAL ALIGNMENT OF SRTIO3 THIN-FILMS PREPARED BY METALLOORGANIC DECOMPOSITION

被引:30
作者
BRAUNSTEIN, G [1 ]
PAZPUJALT, GR [1 ]
MASON, MG [1 ]
BLANTON, T [1 ]
BARNES, CL [1 ]
MARGEVICH, D [1 ]
机构
[1] EASTMAN KODAK CO,DIV ANALYT TECHNOL,ROCHESTER,NY 14650
关键词
D O I
10.1063/1.353310
中图分类号
O59 [应用物理学];
学科分类号
摘要
The processes of formation and crystallization of thin films of SrTiO3 prepared by the method of metallo-organic decomposition have been studied with particular emphasis on the relationship between the thermal decomposition of the metallo-organic precursors and the eventual epitaxial alignment of the crystallized films. The films are deposited by spin coating onto single-crystalline silicon and SrTiO3 substrates, pyrolyzed on a hot plate at temperatures ranging from 200 to 450-degrees-C, and subsequently heat treated in a quartz tube furnace at temperatures ranging from 300 to 1200-degrees-C. Heat treatment at temperatures up to 450-500-degrees-C results in the evaporation of solvents and other organic addenda, thermal decomposition of the metallo-organic (primarily metal-carboxylates) precursors, and formation of a carbonate species. This carbonate appears to be an intermediate phase in the reaction of SrCO3 and TiO2 to form SrTiO3. Relevant to this work is the fact that the carbonate species exhibits diffraction lines, indicating the formation of grains that can serve as seeds for the nucleation and growth of randomly oriented SrTiO3 crystallites, thereby leading to a polycrystalline film. Deposition on silicon substrates indeed results in the formation of polycrystalline SrTiO3. However, when the precursor solution is deposited on single-crystalline SrTiO3 substrates, the crystallization process involves a competition between two mechanisms: the random nucleation and growth of crystallites just described, and layer-by-layer solid phase epitaxy. Epitaxial alignment on SrTiO3 Substrates can be achieved when the samples are heat treated at temperatures of 1100-1200-degrees-C or at temperatures as low as 600-650-degrees-C when the substrate is heated to about 1100-degrees-C before spin coating.
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页码:961 / 970
页数:10
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