BURIED CHANNEL GAAS-MESFETS - SCATTERING PARAMETER AND LINEARITY DEPENDENCE ON THE CHANNEL DOPING PROFILE

被引：11

作者：

DEKKERS, JJM

PONSE, F

BENEKING, H

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 09期

关键词：

D O I：

10.1109/T-ED.1981.20486

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1065 / 1070

页数：6

共 13 条

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[9] CALCULATION OF MICROWAVE PERFORMANCE OF BUFFER LAYER GATE GAAS MESFET [J].

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[10]

PONSE F, UNPUBLISHED

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