THE LOGARITHMIC RESPONSE OF PALLADIUM-GATE METAL-INSULATOR-SILICON FIELD-EFFECT TRANSISTORS TO HYDROGEN

被引：18

作者：

ROBINS, I

ROSS, JF

SHAW, JEA

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 02期

关键词：

D O I：

10.1063/1.337387

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：843 / 845

页数：3

共 9 条

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[7]

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[8] HYDROGEN ADSORPTION STATES AT THE EXTERNAL AND INTERNAL PALLADIUM SURFACES OF A PALLADIUM-SILICON DIOXIDE-SILICON STRUCTURE [J].

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[9]

ROBINS I, UNPUB

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