INTERACTION OF IMPLANTED DEUTERIUM AND HELIUM WITH BERYLLIUM - RADIATION ENHANCED OXIDATION

The interaction of implanted deuterium and helium with beryllium is of significant interest in the application of first wall coatings and other components of fusion reactors. Electropolished polycrystalline beryllium was first implanted with a Xe backscatter marker at 1.98 MeV followed by either implantation with 5 keV diatomic deuterium or helium. A 2.0 MeV He beam was used to analyze for impurity buildup, namely oxygen. The oxide layer thickness was found to increase linearly with increasing implant fluence. A 2.5 MeV H+ beam was used to depth profile the D and He by ion backscattering. In addition the retention of the implant was measured as a function of the implant fluence. The mean depth of the implant was found to agree with theoretical range calculations.Scanning electron microscopy was used to observe blister formation. No blisters were observed for implanted D but for implanted He, blisters occurred at $ ̃1.75 × 1017 He·cm-2. The blister diameter increased with increasing implant fluence from about 0.8 μm at 1018 He·cm-2 to 5.5 μm at 3 x 1018 He·cm-2. © 1979.