ALTERNATIVE RELATIONSHIP FOR CONVERTING INCREMENTAL SHEET RESISTIVITY MEASUREMENTS INTO PROFILES OF IMPURITY CONCENTRATION

被引：18

作者：

EVANS, RA

DONOVAN, RP

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 02期

关键词：

D O I：

10.1016/0038-1101(67)90033-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：155 / &

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[1] INFLUENCE OF DAMAGED SURFACE LAYER ON RESISTIVITY AND MOBILITY OF THIN SEMICONDUCTOR SHEETS
FRANK, H
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (06) : 609 - &
[2] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
IRVIN, JC
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[3] ELECTRON AND HOLE MOBILITIES IN INVERSION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES
LEISTIKO, O
GROVE, AS
SAH, CT
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (05) : 248 - +
[4] STUDIES OF ANOMALOUS DIFFUSION OF IMPURITIES IN SILICON
NICHOLAS, KH
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (01) : 35 - +
[5] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON
TANNENBAUM, E
[J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 123 - 132