STRUCTURAL STABILITY OF SILICON IN TIGHT-BINDING MODELS

被引：42

作者：

PAXTON, AT ^{[1
]}

SUTTON, AP ^{[1
]}

NEX, CMM ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1987年 / 20卷 / 14期

关键词：

D O I：

10.1088/0022-3719/20/14/001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

SEMICONDUCTING SILICON

引用

页码：L263 / L269

页数：7

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