HIGH-TC Y-BA-CU-O THIN-FILMS PREPARED BY INSITU LOW-TEMPERATURE CODEPOSITION OF Y, BAF2, AND CU ON ALPHA-AL2O3 SUBSTRATES

被引:14
作者
CHROMIK, S
HANIC, F
ADAM, R
JERGEL, M
LIDAY, J
BENACKA, S
机构
[1] SLOVAK ACAD SCI, INST INORGAN CHEM, CS-84236 BRATISLAVA, CZECHOSLOVAKIA
[2] SLOVAK UNIV TECHNOL BRATISLAVA, DEPT MICROELECTR, CS-81219 BRATISLAVA, CZECHOSLOVAKIA
关键词
D O I
10.1063/1.103244
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thin Y-Ba-CU-O films were prepared in-situ by low-temperature codeposition on Al2O3 substrates. The temperatures during preparation did not exceed 600 °C. As a source of Ba the BaF2 was used. The zero resistance Tc values were higher than 84 K, Jc =4×104 A/cm2 at 4.2 K/OT. The Auger electron spectroscopy analysis has shown almost a homogeneous distribution of the film components throughout the film thickness. X-ray diffraction revealed the presence of unoriented 1-2-3 phase besides BaF2 and CuO and, one undefined phase, which might be oxyfluoride compound.
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页码:2237 / 2239
页数:3
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