DEPENDENCE OF THE ELECTRICAL CHARACTERISTICS OF HEAVILY GE-DOPED GAAS ON MOLECULAR-BEAM EPITAXY GROWTH-PARAMETERS

被引：12

作者：

METZE, GM ^{[1
]}

STALL, RA ^{[1
]}

WOOD, CEC ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

来源：

关键词：

D O I：

10.1063/1.91810

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：165 / 167

页数：3

共 8 条

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[4] IONIZATION INTERACTION BETWEEN IMPURITIES IN SEMICONDUCTORS AND INSULATORS
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[J]. PHYSICAL REVIEW, 1956, 102 (04): : 992 - 999
[5] STALL RA, UNPUBLISHED
[6] TIN-DOPING EFFECTS IN GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY
WOOD, CEC
JOYCE, BA
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (09) : 4854 - 4861
[7] COMPLEX FREE-CARRIER PROFILE SYNTHESIS BY ATOMIC-PLANE DOPING OF MBE GAAS
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METZE, G
BERRY, J
EASTMAN, LF
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 383 - 387
[8] WOOD CEC, 1978, 7TH P INT S GAAS REL, P48