ION-IMPLANTED SILICON DETECTORS PROCESSED ON A 100 MM WAFER

被引：8

作者：

HIETANEN, I

LINDGREN, J

ORAVA, R

TUUVA, T

BRENNER, R

ANDERSSON, M

LEINONEN, K

RONKAINEN, H

机构：

[1] TECH RES CTR FINLAND,SF-02150 ESPOO 15,FINLAND

[2] SWEDISH UNIV ABO,TURKU,FINLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1991年 / 301卷 / 01期

关键词：

D O I：

10.1016/0168-9002(91)90744-B

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A planar process for manufacturing large silicon detectors on a 100 mm wafer has been developed. Several oxidation and annealing temperatures were studied in order to optimize detector performance. A strip detector with an active area of 32 X 58 mm2 together with various single detector diodes were processed and tested. The 1280 strip detector with 25-mu-m strip and readout pitch was connected to multiplexing LSI electronics and tested with tracks from a Sr-90 beta source. The most probable signal pulse height was found to be 14 times the sigma-noise of any individual channel.

引用

页码：116 / 120

页数：5