NOVEL WETTING BEHAVIOR IN QUANTUM FILMS

被引:136
作者
CHENG, E
COLE, MW
DUPONTROC, J
SAAM, WF
TREINER, J
机构
[1] PENN STATE UNIV, DEPT PHYS, UNIV PK, PA 16802 USA
[2] ECOLE NORMALE SUPER, DEPT PHYS, SPECTROSCOPIE HERTZIENNE LAB, F-75231 PARIS 05, FRANCE
[3] INST PHYS NUCL LYON, DIV PHYS THEOR, F-91406 ORSAY, FRANCE
关键词
D O I
10.1103/RevModPhys.65.557
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Theory and experiment have revealed that novel behavior occurs when a Cs surface is exposed to He-4 vapor. For temperature T below the wetting temperature (T(w) congruent-to 2 K), He-4 forms only a microscopically thin film as the vapor pressure P increases from zero to its saturated value. For intermediate values of T(T(w) less-than-or-equal-to T less-than-or-equal-to T(c) congruent-to 2.5 K), the film thickness jumps discontinuously at a prewetting transition pressure P(pw)(T). For P > P(pw), ad for all P if T > T(c), the film grows continuously to infinite thickness as saturation is approached. Microscopic theories of these phenomena are discussed in terms of the basic physics of electrons and atomic interactions. Initial experimental observations are summarized. Related phenomena of interest are described, including observation of prewetting with adsorbates other than He and substrates other than Cs.
引用
收藏
页码:557 / 567
页数:11
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