CHARACTERIZATION OF FOCUSED ION-BEAM-INDUCED DAMAGE

被引：12

作者：

VETTERLI, D

DOBELI, M

MUHLE, R

NEBIKER, PW

MUSIL, CR

机构：

[1] Institute of Particle Physics, ETH-Hönggerberg

[2] Paul Scherrer Institute ETH-Hönggerberg

[3] Paul Scherrer Institute, CH-8048 Zürich

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 27卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(94)00120-J

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have irradiated simple structures on Si and GaAs with a finely-focused Ga+-ion beam of variable energy. In order to study the influence of dose and beam energy on the damage distribution in crystals, we evaluated sensitive characterization methods with high spatial resolution. So far Cathodoluminescence (CL) and Thermal Wave Analysis (TWA) are promising techniques showing a sensitivity down to a dose < 10(12) cm-2 and 10(10) cm-2, respectively, at 30 keV beam energy. First results are shown and discussed.

引用

页码：339 / 342

页数：4