CRYSTAL ENGINEERING OF HIGH-T-C AND RELATED OXIDE-FILMS FOR FUTURE ELECTRONICS

被引：3

作者：

KOINUMA, H

机构：

[1] Center for Ceramics Research, Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Yokohama, 226, 4259 Nagatsuta, Midori-ku

来源：

BULLETIN OF MATERIALS SCIENCE | 1995年 / 18卷 / 04期

关键词：

CRYSTAL ENGINEERING; HIGH-T-C SUPERCONDUCTOR; OXIDE ELECTRONICS; LASER MBE; ATOMIC LAYER EPITAXY;

D O I：

10.1007/BF02749772

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Advanced technology and future prospect of oxide-based electronic materials are described with a focus on the significance of atomically controlled epitaxy of high-T-c superconductors and related oxide films. Problems in suitably forming the oxides whose power is potentially superior to silicon's are discussed to stimulate technology development for engineering oxide film growth on an atomic scale. Our experimental results on controlled epitaxial growth of oxide films are presented with respect to pulsed laser deposition of Y8a(2)Cu(3)O(7-delta), films as well as laser MBE growth of SrTiO3 homoepitaxy and CeO2 heteroepitaxy on Si substrates.

引用

页码：435 / 445

页数：11

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