THE DUPLEX STRUCTURE OF CELL-WALLS OF POROUS ANODIC FILMS FORMED ON ALUMINUM

被引:61
作者
ONO, S
MASUKO, N
机构
[1] Institute of Industrial Science, The University of Tokyo, Minato-ku, Tokyo, 106, Roppongi
关键词
D O I
10.1016/0010-938X(92)90078-H
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The depth and the amount of anion incorporation into the cell walls of porous anodic films formed in a phosphoric acid solution have been studied using TEM and EDX. Both increased with increasing forming voltage; however, a duplex structure could not confirmed for films formed at voltages below 10V.
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页码:503 / &
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共 12 条
[1]   BEHAVIOR OF SULFATE-IONS DURING FORMATION OF ANODIC OXIDE FILM ON ALUMINUM [J].
FUKUDA, Y ;
FUKUSHIMA, T .
BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, 1980, 53 (11) :3125-3130
[2]  
FUKUDA Y, 1974, J CHEM SOC JPN, P1868
[3]   THE OBSERVATION OF ANODIC OXIDE-FILMS ON ALUMINUM BY HIGH-RESOLUTION ELECTRON-MICROSCOPY [J].
ONO, S ;
ICHINOSE, H ;
KAWAGUCHI, T ;
MASUKO, N .
CORROSION SCIENCE, 1990, 31 :249-254
[4]  
ONO S, 1991, J SURF FINISH SOC JP, V42, P1333
[5]  
ONO S, IN PRESS CORR SCI
[6]   DISTRIBUTION OF ANIONS AND PROTONS IN OXIDE-FILMS FORMED ANODICALLY ON ALUMINUM IN A PHOSPHATE SOLUTION [J].
TAKAHASHI, H ;
FUJIMOTO, K ;
KONNO, H ;
NAGAYAMA, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) :1856-1861
[7]  
TAKAHASHI H, 1974, J CHEM SOC JPN, P453
[8]  
Takahashi H., 1985, J SURF FIN SOC JPN, V36, P96
[9]  
Thompson G. E., 1980, T I MET FINISH, V58, P21
[10]   ANODIC-OXIDATION OF ALUMINUM [J].
THOMPSON, GE ;
XU, Y ;
SKELDON, P ;
SHIMIZU, K ;
HAN, SH ;
WOOD, GC .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (06) :651-667