SIMULTANEOUS AM-AM AM-PM DISTORTION MEASUREMENTS OF MICROWAVE TRANSISTORS USING ACTIVE LOAD-PULL AND 6-PORT TECHNIQUES

A programmable active load-pull measurement system using two six-port reflectometers and three passive two-port standards has been developed to obtain load-pull contours of the transistor's input-output phase shift variations over a wide dynamic range of the input power. The output power, gain, power-added efficiency, and phase shift are measured simultaneously at the transistor's input and output reference planes. The phase distortion versus input power, phi similar to P-in, and the AM-PM conversion coefficient at various power levels, k similar to P-in, are obtained for different load impedances by post-measurement calculations, A NE8001 MESFET is tested at f = 1.7 GHz for the class A operation, The experimental results are also given.