TUNNELING INTO INTERFACE STATES OF MOS STRUCTURES

[1] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &

[2] CROWELL CR, 1965, J APPL PHYS, V36, P3343

[3] IMPROVED PROPERTIES OF SILICON DIOXIDE LAYERS GROWN UNDER BIAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) : 138 - +

[4] AU-N-TYPE GAAS SCHOTTKY BARRIER + ITS VARACTOR APPLICATION [J]. BELL SYSTEM TECHNICAL JOURNAL, 1964, 43 (1P1): : 215 - +

[5] NICOLLIAN EH, TO BE PUBLISHED

[6] WAXMAN AS, 1966, THESIS PRINCETON U

[1] CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J]. SOLID-STATE ELECTRONICS, 1966, 9 (11-1) : 1035 - &

[2] CROWELL CR, 1965, J APPL PHYS, V36, P3343

[3] IMPROVED PROPERTIES OF SILICON DIOXIDE LAYERS GROWN UNDER BIAS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) : 138 - +

[4] AU-N-TYPE GAAS SCHOTTKY BARRIER + ITS VARACTOR APPLICATION [J]. BELL SYSTEM TECHNICAL JOURNAL, 1964, 43 (1P1): : 215 - +

[5] NICOLLIAN EH, TO BE PUBLISHED

[6] WAXMAN AS, 1966, THESIS PRINCETON U