EPITAXIAL LATERAL OVERGROWTH OF GAAS BY LPE

被引：136

作者：

NISHINAGA, T ^{[1
]}

NAKANO, T ^{[1
]}

ZHANG, S ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 06期

关键词：

D O I：

10.1143/JJAP.27.L964

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L964 / L967

页数：4

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