WAVELENGTH UNIFORMITY OF 1.3-MU-M GAINASP-INP DISTRIBUTED BRAGG REFLECTOR LASERS WITH HYBRID BEAM VAPOR EPITAXIAL-GROWTH

被引:12
作者
KOCH, TL [1 ]
CORVINI, PJ [1 ]
KOREN, U [1 ]
TSANG, WT [1 ]
机构
[1] AT&T BELL LABS,MURRAY HILL,NJ 07974
关键词
D O I
10.1049/el:19880560
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
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页码:822 / 824
页数:3
相关论文
共 4 条
[1]  
HENRY CH, 1987, IEEE J QUANTUM ELECT, V21, P1887
[2]   SEMI-INSULATING BLOCKED PLANAR BH GAINASP-INP LASER WITH HIGH-POWER AND HIGH MODULATION BANDWIDTH [J].
KOREN, U ;
MILLER, BI ;
EISENSTEIN, G ;
TUCKER, RS ;
RAYBON, G ;
CAPIK, RJ .
ELECTRONICS LETTERS, 1988, 24 (03) :138-140
[3]   HIGH-QUALITY NARROW GAINAS/INP QUANTUM-WELLS GROWN BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
MILLER, BI ;
SCHUBERT, EF ;
KOREN, U ;
OURMAZD, A ;
DAYEM, AH ;
CAPIK, RJ .
APPLIED PHYSICS LETTERS, 1986, 49 (20) :1384-1386
[4]   CHEMICAL BEAM EPITAXY OF INP AND GAAS [J].
TSANG, WT .
APPLIED PHYSICS LETTERS, 1984, 45 (11) :1234-1236