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DIRECT INTERFEROMETRIC MEASUREMENTS OF QUANTUM-CONFINED STARK-EFFECT IN INAS GAAS SHORT-PERIOD STRAINED-LAYER SUPERLATTICE MQWS

被引：5
作者：
KOEHLER, SD
GARMIRE, EM
JUPINA, MH
HASENBERG, TC
KOST, AR
机构：
[1] UNIV SO CALIF,DEPT ELECT ENGN ELECTROPHYS,NATL CTR INTEGRATED PHOTON TECHNOL,LOS ANGELES,CA 90089
[2] HUGHES RES LABS,MALIBU,CA 90265
来源：
ELECTRONICS LETTERS | 1991年 / 27卷 / 25期
关键词：
SEMICONDUCTOR MATERIALS; SEMICONDUCTOR DEVICES AND MATERIAL TESTING;
D O I：
10.1049/el:19911426
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrorefraction within and below the band edge of multiple (50) InAs/GaAs short period strained-layer super-lattice quantum wells has been measured. An index change of 4 x 10(-3) was measured near the excitonic resonance with an applied electric field of 27 kV/cm, corresponding to a quadratic electro-optic coefficient of -3 x 10(-13) cm2/V2. These results agree with predictions from the Kramers-Kronig relations based on measurements of electroabsorption.
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页码：2303 / 2304
页数：2
相关论文
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