A STUDY OF RETICLE DEFECTS IMAGED INTO 3-DIMENSIONAL DEVELOPED PROFILES OF POSITIVE PHOTORESIST USING THE SOLID LITHOGRAPHY SIMULATOR

被引：12

作者：

HENKE, W

MEWES, D

WEISS, M

CZECH, G

SCHIESSHOYLER, R

机构：

[1] Fraunhofer-Institut für Mikrostruktechnik, 1000 Berlin 33

[2] Siemens AG, Semiconductor Group, 8000 München 83

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 14卷 / 3-4期

关键词：

SIMULATION; OPTICAL LITHOGRAPHY; DEVELOPMENT; CELL-REMOVAL ALGORITHM; RETICLE DEFECTS;

D O I：

10.1016/0167-9317(91)90013-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the modeling approach and the implementation of a simulation algorithm for three-dimensional development processes of positive photoresists. The method is based on the cell-removal algorithm and has been incorporated into the simulator tool SOLID (Simulation of Optical Lithography in three Dimensions). For a validation of the algorithm the tool has been applied for a study on optically exposed, developed profiles of positive photoresist with reduced fidelity due to the presence of defects on the reticle. For this investigation a number of experiments were carried out using production type exposure equipment and resist material. Simulated and experimental results are compared.

引用

页码：283 / 297

页数：15

共 19 条

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