IMAGING OF STRESSES IN GAAS DIODE-LASERS USING POLARIZATION-RESOLVED PHOTOLUMINESCENCE

被引：47

作者：

COLBOURNE, PD

CASSIDY, DT

机构：

[1] Department of Engineering Physics, McMaster University, Hamilton

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 01期

关键词：

D O I：

10.1109/3.199245

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Images of stress distributions in GaAs-based diode lasers have been obtained using scanned polarization-resolved photoluminescence. A stress resolution of about 10(7) dyn/cm2 and a spatial resolution of about 1 mum have been obtained. The experimental technique is described, and measured stress distributions due to ridge structures, metallization, applied force, and bonding are presented.

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页码：62 / 68

页数：7

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