OBSERVATION OF ENHANCED ELECTRON-ION RECOMBINATION RATES AT VERY-LOW ENERGIES

被引：86

作者：

GAO, H ^{[1
]}

DEWITT, DR ^{[1
]}

SCHUCH, R ^{[1
]}

ZONG, W ^{[1
]}

ASP, S ^{[1
]}

PAJEK, M ^{[1
]}

机构：

[1] JAN KOCHANOWSKI UNIV HUMANITIES & SCI, KIELCE, POLAND

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.75.4381

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A strong enhancement of electron-ion recombination over expected rates at sub-eV relative energies is revealed for highly charged ions. Measured Ne10+ and Ar13+ recombination rates were found to be enhanced at low (<1 meV) energies by factors of 4 and 10 over theoretical predictions of radiative recombination rates, respectively. It is shown that the majority of the enhancement in Ar13+ is caused by very low lying Delta n = 0 dielectronic recombination resonances; nevertheless, the nonresonant contributions to the measured recombination rates for both systems were found to be significantly higher than predicted by presently available models.

引用

页码：4381 / 4384

页数：4

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