METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF LEAD TITANATE

被引:24
作者
HENDRICKS, WC [1 ]
DESU, SB [1 ]
PENG, CH [1 ]
机构
[1] VIRGINIA POLYTECH INST & STATE UNIV,DEPT MAT SCI & ENGN,BLACKSBURG,VA 24061
关键词
D O I
10.1021/cm00047a011
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this study, the metalorganic chemical vapor deposition (MOCVD) of lead titanate (PbTiO3) was studied using the metalorganic precursors lead bis(tetramethylheptadionate) (Pb(thd)2) and titanium ethoxide (Ti(OEt)4). The structure, composition, and thickness of the resulting films were studied and correlated with the experimental processing parameters. Optical and electrical properties were obtained for the lead titanate films on sapphire and platinum-coated silicon, respectively. Several important processing issues are also addressed including the existence of a high-temperature self-limiting reaction regime for high reproducibility of film stoichiometry and also the stability of the ruthenium oxide-coated silicon substrates in the MOCVD process environment which are candidate electrode materials.
引用
收藏
页码:1955 / 1960
页数:6
相关论文
共 13 条
[1]  
DEKEIJSER M, 1992, 4TH P ISIF 92 INT S, P243
[2]   MICROSTRUCTURE OF PBTIO3 THIN-FILMS DEPOSITED ON (001)MGO BY MOCVD [J].
GAO, Y ;
BAI, G ;
MERKLE, KL ;
SHI, Y ;
CHANG, HLM ;
SHEN, Z ;
LAM, DJ .
JOURNAL OF MATERIALS RESEARCH, 1993, 8 (01) :145-153
[3]  
HENDRICKS WC, 1992, MATER RES SOC SYMP P, V310, P241
[4]   METALORGANIC CHEMICAL VAPOR-DEPOSITION OF PBTIO3 THIN-FILMS [J].
KWAK, BS ;
BOYD, EP ;
ERBIL, A .
APPLIED PHYSICS LETTERS, 1988, 53 (18) :1702-1704
[5]  
KWOK CK, 1992, 4TH P INT S INT FERR, P412
[6]  
MOULSON AJ, 1990, ELECTROCERAMICS MAT, P253
[7]  
NYMAN M, 1992, THESIS VIRGINIA POLY
[8]  
SEDDON EA, 1984, CHEM RUTHENIUM, P113
[9]  
SHIMIZU M, 1991, SPIE, V1519, P122
[10]   CHARACTERIZATION OF MOCVD PBTIO3 THIN-FILMS [J].
SWARTZ, SL ;
SEIFERT, DA ;
NOEL, GT ;
SHROUT, TR .
FERROELECTRICS, 1989, 93 :37-43