NEGATIVE HALL-EFFECT OF HOT HOLES IN SILICON

被引：15

作者：

KAJITA, K

机构：

[1] Department of Physics, Faculty of Science, University of Tokyo, Bunyo-ku, Tokyo, 113

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 31卷 / 08期

关键词：

D O I：

10.1016/0038-1098(79)90255-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Hot electron effects of low density holes in silicon were studied in the helium temperature with electric fields up to 5000 V cm-1. Hall current of electron polarity was observed in high electric fields at low magnetic fields. The phenomenon is ascribed to the re-entrant energy surface of holes in silicon. © 1979.

引用

页码：573 / 576

页数：4

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[10]

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