EPITAXIAL-GROWTH OF KNDP4O12 LASER WAVEGUIDES

被引：22

作者：

MIYAZAWA, S

KOIZUMI, H

KUBODERA, K

IWASAKI, H

机构：

[1] Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino-shi, Tokyo

来源：

JOURNAL OF CRYSTAL GROWTH | 1979年 / 47卷 / 03期

关键词：

D O I：

10.1016/0022-0248(79)90198-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of KNdP4O12 and KLaP4O12 single crystals from an H3PO4 solution was accomplished with an evaporation and condensation technique. Using the solution from which KNdP4O12 can crystallize, a KNdP4O12 single-crystal epitaxial waveguide layer was successfully deposited on as-grown KLaP4O12 substrates in the same manner. The layer on the (001) plane exhibited a good epitacial waveguide, and a 28 μm thick KNdP4O12 waveguide laser was obtained. © 1979.

引用

页码：351 / 356

页数：6

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