DUAL-GATE GALLIUM-ARSENIDE MICROWAVE FIELD-EFFECT TRANSISTOR

[1] HIGH-SPEED GALLIUM-ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. ELECTRONICS LETTERS, 1970, 6 (08) : 228 - +

[2] TURNER JA, 1970, 3RD P INT S GAAS, P234

[3] TURNER JA, 1969, 2ND P INT S ARS GALL, P195

[1] HIGH-SPEED GALLIUM-ARSENIDE SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J]. ELECTRONICS LETTERS, 1970, 6 (08) : 228 - +

[2] TURNER JA, 1970, 3RD P INT S GAAS, P234

[3] TURNER JA, 1969, 2ND P INT S ARS GALL, P195