III-V COMPOUND SEMICONDUCTOR REACTIVE ION ETCHING IN CHLORINE AND METHANE CONTAINING MIXTURES

被引：7

作者：

DULKIN, AE

MOSHKALYOV, SA

PYATAEV, VZ

SMIRNOV, AS

FROLOV, KS

机构：

[1] A.F. Ioffe Physical Technical Institute, USSR Academy of Sciences, Polytehnicheskaya, 26, Leningrad

[2] Plasma Physics Department, Leningrad State Technical University, Polytehnicheskaya, 29, Leningrad

来源：

MICROELECTRONIC ENGINEERING | 1992年 / 17卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(92)90071-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs and InP reactive ion etching in gas mixtures Cl2/Ar, SiCl4/Ar, CH4/H2, CH4/H2/Ar/Cl2 was investigated in the wide range of discharge parameters in order to find out the conditions for obtaining their equal etch rates and good surface morphology. It has been demonstrated that III-V compounds nonselective etching with good surface morphology can be achieved in chlorine, hydrogen and methane - containing mixture.

引用

页码：345 / 348

页数：4

共 4 条

[1] Dulkin, Moshkalyov, Pyataev, Smirnov, Sokolova, Proc. X National Conf. Ion-Surface Interaction, (1991)
[2] Niggerbrugge, Lug, Garus, Inst. Phys. Conf. Ser., 79, (1985)
[3] Vodjdani, Parrens, Reactive ion etching of GaAs with high aspect ratios with Cl2–CH4–H2–Ar mixtures, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 5 B, (1987)
[4] van Gurp, Jacors, Binsma, Tiemeijer, InGaAsP/InP Lasers with Two Reactive-Ion-Etched Mirror Facets, Japanese Journal of Applied Physics, 20, (1989)

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