INJECTED-CARRIER INDUCED REFRACTIVE-INDEX CHANGE IN SEMICONDUCTOR-LASERS

[1] ITO M, 1980, J QUANTUM ELECTRON, V16, P910

[2] MATHEWS MR, 1972, ELECTRON LETT, V8, P570

[3] MODE GUIDANCE PARALLEL TO JUNCTION PLANE OF DOUBLE-HETEROSTRUCTURE GAAS LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4696 - 4707

[4] OLSSON AG, UNPUBLISHED

[5] DISPERSION OF INDEX OF REFRACTION NEAR ABSORPTION EDGE OF SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1964, 133 (6A): : 1653 - +

[6] Thompson G. H. B., 1972, Opto-Electronics, V4, P257, DOI 10.1007/BF02334396

[7] SELF-FOCUSING EFFECTS IN PULSATING ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (01) : 60 - 68

[8] SPECTRAL BROADENING OF PULSATING ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (11) : 1277 - 1281

[9] 1978, SEMICONDUCTOR LASER

[1] ITO M, 1980, J QUANTUM ELECTRON, V16, P910

[2] MATHEWS MR, 1972, ELECTRON LETT, V8, P570

[3] MODE GUIDANCE PARALLEL TO JUNCTION PLANE OF DOUBLE-HETEROSTRUCTURE GAAS LASERS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4696 - 4707

[4] OLSSON AG, UNPUBLISHED

[5] DISPERSION OF INDEX OF REFRACTION NEAR ABSORPTION EDGE OF SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1964, 133 (6A): : 1653 - +

[6] Thompson G. H. B., 1972, Opto-Electronics, V4, P257, DOI 10.1007/BF02334396

[7] SELF-FOCUSING EFFECTS IN PULSATING ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (01) : 60 - 68

[8] SPECTRAL BROADENING OF PULSATING ALXGA1-XAS DOUBLE HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (11) : 1277 - 1281

[9] 1978, SEMICONDUCTOR LASER