TUNABLE UV GENERATION AT 286 NM BY FREQUENCY TRIPLING OF A HIGH-POWER MODE-LOCKED SEMICONDUCTOR-LASER

被引：29

作者：

GOLDBERG, L ^{[1
]}

KLINER, DAV ^{[1
]}

机构：

[1] HARVARD UNIV, DEPT EARTH & PLANETARY SCI, CAMBRIDGE, MA 02138 USA

来源：

OPTICS LETTERS | 1995年 / 20卷 / 15期

关键词：

D O I：

10.1364/OL.20.001640

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We produced ultraviolet radiation by frequency tripling the mode-locked emission of an external cavity laser containing a tapered GaAlAs amplifier gain element. The 429-nm second harmonic produced by a KNbO3 crystal was sum-frequency mixed with the 858-nm fundamental in a Li3BO5 crystal, generating as much as 50 mu W of power at 286 nm. (C) 1995 Optical Society of America.

引用

页码：1640 / 1642

页数：3

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