HIGH-QUALITY AMORPHOUS-SILICON GERMANIUM PRODUCED BY CATALYTIC CHEMICAL VAPOR-DEPOSITION

被引：60

作者：

MATSUMURA, H

机构：

来源：

关键词：

D O I：

10.1063/1.98871

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：804 / 805

页数：2

共 6 条

[1] KONAGAI M, 1985, 18TH P IEEE PHOT SPE, P1372
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[3] CATALYTIC CHEMICAL VAPOR-DEPOSITION (CTL-CVD) METHOD PRODUCING HIGH-QUALITY HYDROGENATED AMORPHOUS-SILICON
MATSUMURA, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (12): : L949 - L951
[4] MATSUMURA H, UNPUB
[5] PREPARATION OF PHOTOCONDUCTIVE A-SIGE ALLOY BY GLOW-DISCHARGE
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SHIMIZU, I
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 533 - 536
[6] CHEMICAL VAPOR-DEPOSITION OF A-SIGE-H FILMS UTILIZING A MICROWAVE-EXCITED PLASMA
WATANABE, T
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (04): : L288 - L290