PITFALLS IN INTERPRETATION OF STRUCTURE-SENSITIVE PROPERTIES

被引：3

作者：

FRANCOMBE, MH

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1969年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.1315653

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：448 / +

页数：1

共 22 条

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[4]

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[5]

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JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (04) :543-&

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DAVEY, JE ;

PANKEY, T .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :212-&

[8] STRUCTURAL + OPTICAL CHARACTERISTICS OF THIN GAAS FILMS [J].

DAVEY, JE ;

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[9] ELECTRICAL PROPERTIES OF SILICON FILMS GROWN EPITAXIALLY ON SAPPHIRE [J].

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JOURNAL OF APPLIED PHYSICS, 1967, 38 (04) :1909-&

[10] EPITAXIAL GROWTH OF GERMANIUM ON SINGLE CRYSTAL SPINEL [J].

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) :749-&

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