OBSERVATION OF SEMICONDUCTOR-SEMIMETAL TRANSITION IN INAS-GASB SUPER-LATTICES

被引：92

作者：

CHANG, LL ^{[1
]}

KAWAI, N ^{[1
]}

SAIHALASZ, GA ^{[1
]}

LUDEKE, R ^{[1
]}

ESAKI, L ^{[1
]}

机构：

[1] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 12期

关键词：

D O I：

10.1063/1.91013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The semiconductor-semimetal transition in InAs-GaSb superlattices is observed at a layer thickness in the vicinity of 100 Å. The transition manifests itself in an increase in the measured carrier concentration as a result of electron transfer from GaSb to InAs when ground subbands of electrons and heavy holes cross each other. Shubnikov-de Haas measurements confirm the carrier enhancement in the semimetallic state.

引用

页码：939 / 942

页数：4

共 17 条

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[7] IHM J, UNPUBLISHED
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[9] MADHUKAR A, UNPUBLISHED
[10] NEUBERGER M, 1971, HDB ELECTRONIC MATER, V2

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