DETERMINATION OF EFFECTIVE G-VALUE OF ELECTRONS IN N-TYPE INSB BY SPIN-FLIP RAMAN-SCATTERING AND ELECTRIC-DIPOLE-EXCITED ELECTRON-SPIN RESONANCE

被引：7

作者：

APPOLD, G

PASCHER, H

EBERT, R

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1978年 / 86卷 / 02期

关键词：

D O I：

10.1002/pssb.2220860215

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：557 / 561

页数：5

共 12 条

[1]

Brueck S. R. J., 1973, Optics Communications, V8, P263, DOI 10.1016/0030-4018(73)90143-0

[2] TRANSIENT INSB SPIN-FLIP LASER - MEASUREMENT OF T1 [J].

BRUECK, SRJ ;

MOORADIAN, A .

OPTICS COMMUNICATIONS, 1976, 18 (04) :539-542

[3] CHARACTERISTICS OF A LOW-FIELD SPIN-FLIP RAMAN LASER - MEASUREMENT OF RAMAN GAIN [J].

DESILETS, CS ;

PATEL, CKN .

APPLIED PHYSICS LETTERS, 1973, 22 (10) :543-545

[4] DETERMINATION OF ELECTRON-SPIN RELAXATION-TIME IN INSB IN HIGH MAGNETIC-FIELDS [J].

GRISAR, R ;

WACHERNIG, H ;

BAUER, G ;

ZAWADZKI, W .

INFRARED PHYSICS, 1976, 16 (1-2) :149-155

[5] ELECTRON SPIN RESONANCE IN N-TYPE INSB [J].

ISAACSON, RA .

PHYSICAL REVIEW, 1968, 169 (02) :312-&

[6]

McCombe B. D., 1974, International Conference on the Application of High Magnetic Fields in Semiconductor Physics, P146

[7] ELECTRIC-DIPOLE-EXCITED ELECTRON SPIN RESONANCE IN INSB [J].

MCCOMBE, BD ;

WAGNER, RJ .

PHYSICAL REVIEW B, 1971, 4 (04) :1285-&

[8] SPIN-FLIP RAMAN-SCATTERING FROM ELECTRONS IN LOCALIZED DONOR STATES IN N-INSB [J].

PASCHER, H ;

APPOLD, G ;

HAFELE, HG .

OPTICS COMMUNICATIONS, 1976, 19 (01) :100-103

[9] SPIN-FLIP RELAXATION IN N-INSB [J].

PASCHER, H ;

APPOLD, G ;

EBERT, R ;

HAFELE, HG .

OPTICS COMMUNICATIONS, 1976, 19 (01) :104-107

[10] RAMAN-GAIN, LINEWIDTH, AND EFFECTIVE G-VALUE WITH SPIN-FLIP-RAMAN SCATTERING IN INSB [J].

PASCHER, H ;

APPOLD, G ;

EBERT, R ;

HAFELE, HG .

APPLIED PHYSICS, 1978, 15 (01) :53-57

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