FAR-INFRARED ABSORPTION IN HIGH RESISTIVITY GAAS

被引：37

作者：

STOLEN, RH

机构：

[1] Bell Telephone Laboratories, Inc., Holmdel

来源：

APPLIED PHYSICS LETTERS | 1969年 / 15卷 / 02期

关键词：

D O I：

10.1063/1.1652908

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The absorption of high resistivity GaAs has been measured in the spectral region 15 to 190 cm-1 at room temperature and at 82°K. The observed temperature and frequency dependence indicate an absorption dominated by 2-phonon difference processes. © 1969 The American Institute of Physics.

引用

页码：74 / &

共 9 条

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[2] ABSOLUTE MEASUREMENT OF SECOND ORDER NONLINEAR COEFFICIENT FOR OPTICAL GENERATION OF MILLIMETER WAVE DIFFERENCE FREQUENCIES IN GAAS
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VANTRAN, N
PATEL, CKN
[J]. APPLIED PHYSICS LETTERS, 1968, 13 (10) : 357 - +
[3] DOLLING G, 1965, 1963 P INT C LATT DY, P19
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[5] JOHNSON FA, 1961, 1960 P INT C PHYS SE, P349
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[J]. PHYSICAL REVIEW, 1960, 118 (01): : 118 - 127
[7] DIELECTRIC CONSTANT AND LOSS TANGENT OF SEMI-INSULATING GAAS AT MICROWAVE FREQUENCIES
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THOMPSON, GH
ANTELL, GR
[J]. APPLIED PHYSICS LETTERS, 1967, 11 (11) : 353 - &
[8] FAR-INFRARED LATTICE ABSORPTION IN ALKALI HALIDE CRYSTALS
STOLEN, R
DRANSFEL.K
[J]. PHYSICAL REVIEW, 1965, 139 (4A): : 1295 - +
[9] THE INFRA-RED SPECTRA OF CRYSTALS
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[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1960, 258 (1294): : 377 - 401

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