RECOMBINATION VELOCITIES ON GAAS(100) SURFACES IMMERSED IN AQUEOUS-SOLUTIONS

被引：14

作者：

GMITTER, TJ ^{[1
]}

YABLONOVITCH, E ^{[1
]}

HELLER, A ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 09期

关键词：

D O I：

10.1149/1.2096281

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：2391 / 2392

页数：2

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共 11 条

[1] ABRAHAMS IL, 1987, NEW J CHEM, V11, P157
[2] CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397
[3] STABLE SEMICONDUCTOR LIQUID JUNCTION CELL WITH 9PERCENT SOLAR TO ELECTRICAL CONVERSION EFFICIENCY
CHANG, KC
HELLER, A
SCHWARTZ, B
MENEZES, S
MILLER, B
[J]. SCIENCE, 1977, 196 (4294) : 1097 - 1099
[4] SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL
FREEOUF, JL
WOODALL, JM
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 727 - 729
[5] Heller A., 1981, ACS SYM SER, V146, P57
[6] INTERFACIAL RECOMBINATION VELOCITY IN GAALAS-GAAS HETEROSTRUCTURES
NELSON, RJ
SOBERS, RG
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (11) : 761 - 763
[7] REDUCTION OF GAAS SURFACE RECOMBINATION VELOCITY BY CHEMICAL TREATMENT
NELSON, RJ
WILLIAMS, JS
LEAMY, HJ
MILLER, B
CASEY, HC
PARKINSON, BA
HELLER, A
[J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 76 - 79
[8] ENHANCED PHOTOELECTROCHEMICAL SOLAR-ENERGY CONVERSION BY GALLIUM-ARSENIDE SURFACE MODIFICATION
PARKINSON, BA
HELLER, A
MILLER, B
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 521 - 523
[9] Shockley W., 1950, ELECT HOLES SEMICOND, P318
[10] SURVEY OF DEFECT-MEDIATED RECOMBINATION LIFETIMES IN GAAS EPILAYERS GROWN BY DIFFERENT METHODS
YABLONOVITCH, E
BHAT, R
HARBISON, JP
LOGAN, RA
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1197 - 1199