DIRECT DELINEATION OF FINE METALLIC PATTERNS THROUGH HYDROGEN REDUCTION OF INORGANIC RESIST HPA

被引：4

作者：

YOSHIMURA, T

ISHIKAWA, A

OKAMOTO, H

MIYAZAKI, H

SAWADA, A

TANIMOTO, T

OKAZAKI, S

机构：

[1] Central Research Laboratory, Hitachi Ltd. Kokubunji, Tokyo

[2] Advanced Research Laboratory, Hitachi Ltd. Hatoyama, Saitama

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 13卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90056-J

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fine metallic patterns of order 0.1-mu-m are directly delineated with electron beam lithography through hydrogen reduction of inorganic resist hetero polytungstic acid (HPA) patterns. Formation of crystalline metal is confirmed with a conductivity measurement, X-ray diffraction and XPS. Through hydrogen reduction at 800-degrees-C for 60 min., resistivity of 25-mu-OMEGA.cm is obtained.

引用

页码：97 / 100

页数：4

共 8 条

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