INFLUENCE OF CARRIER ENERGY QUANTIZATION ON THRESHOLD VOLTAGE OF METAL-OXIDE-SEMICONDUCTOR TRANSISTOR

被引:23
作者
JANIK, T
MAJKUSIAK, B
机构
[1] Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 00-662 Warsaw
关键词
D O I
10.1063/1.355766
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new method for calculating free carrier energy quantization in the depletion region is proposed and applied to investigate the influence of this phenomenon on the metal-oxide-semiconductor transistor threshold voltage. This influence is significant when the semiconductor surface region is highly doped. Other phenomena essential for high doping levels such as the energy degeneration, the incomplete ionization of dopants, and the band-gap narrowing are taken into account.
引用
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页码:5186 / 5190
页数:5
相关论文
共 8 条
[1]  
AGRAWAL B, 1993, UNPUB SEP P ESSDERC, P919
[2]  
BEWS JR, 1990, HIGH SPEED SEMICONDU
[3]  
DORT MJ, 1991, SIMULATION SEMICONDI, V4, P451
[4]  
Dort MJV, 1992, IEEE T ELECTRON DEV, V39, P932
[5]  
Horiguchi S., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P761
[6]   A SIMPLE EXPRESSION FOR BAND-GAP NARROWING (BGN) IN HEAVILY DOPED SI, GE, GAAS AND GEXSI1-X STRAINED LAYERS [J].
JAIN, SC ;
ROULSTON, DJ .
SOLID-STATE ELECTRONICS, 1991, 34 (05) :453-465
[7]  
Merzbacher E, 1970, QUANTUM MECH, P129
[8]   SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J].
STERN, F .
PHYSICAL REVIEW B, 1972, 5 (12) :4891-&