PREPARATION OF (IN,MN)AS/(GA,AL)SB MAGNETIC SEMICONDUCTOR HETEROSTRUCTURES AND THEIR FERROMAGNETIC CHARACTERISTICS

被引：160

作者：

MUNEKATA, H

ZASLAVSKY, A

FUMAGALLI, P

GAMBINO, RJ

机构：

[1] IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 21期

关键词：

D O I：

10.1063/1.110276

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A series of III-V-based magnetic semiconductor heterostructures, p-type (In,Mn)As/(Ga,Al)Sb, has been grown by molecular beam epitaxy. Studies on magnetotransport and magneto-optical properties show that perpendicular ferromagnetic order occurs in the heterostructures with thin (In,Mn)As layers. The origin is discussed in terms of both carrier- and strain-induced effects.

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页码：2929 / 2931

页数：3

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